Now showing items 1-2 of 2

    • Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology 

      Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; De Keersgieter, An; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Baudemprez, Bart; Vandeweyer, Tom; Van Roey, Frieda; Baerts, Christina; Goossens, Danny; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Dusa, Mircea; Romijn, Leon; Pigneret, Charles; van Dijk, Andre; Schreutelkamp, Rob; Cockburn, Andrew; Gravey, Virginie; Meiling, H.; Hultermans, B.; Lok, S.; Shah, K.; Rajagopalan, R.; Gelatos, J.; Richard, Olivier; Bender, Hugo; Vandenberghe, Geert; Beyer, Gerald; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2009-12)
    • Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell 

      Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Demand, Marc; de Marneffe, Jean-Francois; Altamirano Sanchez, Efrain; De Keersgieter, An; Delvaux, Christie; De Backer, Johan; Brus, Stephan; Hermans, Jan; Baudemprez, Bart; Van Roey, Frieda; Lorusso, Gian; Baerts, Christina; Goossens, Danny; Vrancken, Christa; Mertens, Sofie; Versluijs, Janko; Truffert, Vincent; Huffman, Craig; Laidler, David; Heylen, Nancy; Ong, Patrick; Parvais, Bertrand; Rakowski, Michal; Verhaegen, Staf; Hikavyy, Andriy; Meiling, H.; Hultermans, B.; Romijn, L.; Pigneret, C.; Lok, S.; Van Dijk, A.; Shah, K.; Noori, A.; Gelatos, J.; Arghavani, R.; Schreutelkamp, Rob; Boelen, Pieter; Richard, Olivier; Bender, Hugo; Witters, Liesbeth; Collaert, Nadine; Rooyackers, Rita; Absil, Philippe; Lauwers, Anne; Jurczak, Gosia; Hoffmann, Thomas Y.; Vanhaelemeersch, Serge; Cartuyvels, Rudi; Ronse, Kurt; Biesemans, Serge (2008)