Authors

Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Demand, Marc; de Marneffe, Jean-Francois; Altamirano Sanchez, Efrain; De Keersgieter, An; Delvaux, Christie; De Backer, Johan; Brus, Stephan; Hermans, Jan; Baudemprez, Bart; Van Roey, Frieda; Lorusso, Gian; Baerts, Christina; Goossens, Danny; Vrancken, Christa; Mertens, Sofie; Versluijs, Janko; Truffert, Vincent; Huffman, Craig; Laidler, David; Heylen, Nancy; Ong, Patrick; Parvais, Bertrand; Rakowski, Michal; Verhaegen, Staf; Hikavyy, Andriy; Meiling, H.; Hultermans, B.; Romijn, L.; Pigneret, C.; Lok, S.; Van Dijk, A.; Shah, K.; Noori, A.; Gelatos, J.; Arghavani, R.; Schreutelkamp, Rob; Boelen, Pieter; Richard, Olivier; Bender, Hugo; Witters, Liesbeth; Collaert, Nadine; Rooyackers, Rita; Absil, Philippe; Lauwers, Anne; Jurczak, Gosia; Hoffmann, Thomas Y.; Vanhaelemeersch, Serge; Cartuyvels, Rudi; Ronse, Kurt; Biesemans, Serge

Conference

Technical Digest International Electron Devices Meeting - IEDM

Title

Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell

Publication type

Proceedings paper

Embargo date

9999-12-31