Browsing by author "Jacobs, K."
Now showing items 1-4 of 4
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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Jacobs, K.; Van Daele, B.; Leys, Maarten; Moerman, Ingrid; Van Tendeloo, G. (2003) -
Highly chemical reactive ion etching of gallium nitride
Karouta, F.; Jacobs, B.; Moerman, I.; Jacobs, K.; Weyher, J.L.; Porowski, S.; Crane, R.; Hageman, P.R. (2000) -
Lattice expansion induced by Zn channeled implantation in GaN
Ding, F.R.; He, W.H.; Vantomme, Andre; Zhao, Q.; Pipeleers, B.; Jacobs, K.; Moerman, Ingrid (2002) -
Zn channeled implantation in GaN: damages investigated by using high resolution XTEM and channeling RBS
Ding, F.R.; He, W.; Vantomme, Andre; Zhao, Q.; Pipeleers, B.; Jacobs, K.; Moerman, Ingrid (2003)