Browsing by author "Federico, Antonio"
Now showing items 1-2 of 2
-
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors
Aoulaiche, Marc; Federico, Antonio; Simoen, Eddy; Ritzenthaler, Romain; Schram, Tom; Arimura, Hiroaki; Cho, Moon Ju; Kauerauf, Thomas; Crupi, Felice; Spessot, Alessio; Caillat, Christian; Fazan, Pierre; Na, Hoon Joo; Son, Yunik; Noh, Kyung Bong; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron (2013) -
Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs
Simoen, Eddy; Federico, Antonio; Aoulaiche, Marc; Ritzenthaler, Romain; Schram, Tom; Arimura, Hiroaki; Cho, Moon Ju; Kauerauf, Thomas; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron; Crupi, Felice; Spessot, Alessio; Caillat, Chirstian; Fazan, Pierre; Na, Hoon Joo; Son, Yunik; Noh, Kyung Bong (2014)