Browsing by author "Verhulst, Anne"
Now showing items 1-20 of 162
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15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors
Verreck, Devin; Van de Put, Maarten; Verhulst, Anne; Soree, Bart; Magnus, Wim; Dabral, Ashish; Thean, Aaron; Groeseneken, Guido (2015) -
A 35nm diameter vertical silicon nanowire short-gate tunnelFET
Vandooren, Anne; Rooyackers, Rita; Leonelli, Daniele; Iacopi, Francesca; De Gendt, Stefan; Verhulst, Anne; Heyns, Marc; Kunnen, Eddy; Nguyen, Duy; Demand, Marc; Ong, Patrick; Lee, Willie; Moonens, Jos; Richard, Olivier; Vandenberghe, William; Groeseneken, Guido (2009) -
A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications
Schulze, Andreas; Verhulst, Anne; Nazir, Aftab; Hantschel, Thomas; Eyben, Pierre; Vandervorst, Wilfried (2013) -
A critical perspective on TunnelFETs
Heyns, Marc; Verhulst, Anne (2014) -
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors
Vandenberghe, William; Verhulst, Anne; Kao, Frank; De Meyer, Kristin; Soree, Bart; Magnus, Wim; Groeseneken, Guido (2012) -
A new complementary hetero-junction vertical tunnel-FET integration scheme
Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Walke, A.; Devriendt, Katia; Locorotondo, Sabrina; Demand, Marc; Bryce, George; Loo, Roger; Hikavyy, Andriy; Vandeweyer, Tom; Huyghebaert, Cedric; Collaert, Nadine; Thean, Aaron (2013) -
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Heyns, Marc; Brammertz, Guy; Caymax, Matty; Groeseneken, Guido; Hoffmann, Thomas Y.; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Pourtois, Geoffrey; Verhulst, Anne; Wang, Gang (2010) -
AFM-based tomography for probing the electrical properties in confined volumes at the nanometer scale
Schulze, Andreas; Hantschel, Thomas; Eyben, Pierre; Verhulst, Anne; Rooyackers, Rita; Vandooren, Anne; Mody, Jay; Vandervorst, Wilfried (2013) -
Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K
Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Agopian, Paula Ghedini; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Smets, Quentin; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2016) -
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Bordallo, Caio; Martino, J.A.; Agopian, P.G.D.; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2017) -
Analytical model for a tunnel field-effect transistor
Vandenberghe, William; Verhulst, Anne; Groeseneken, Guido; Soree, Bart; Magnus, Wim (2008) -
Analytical model for point and line tunneling in a tunnel field-effect transistor
Vandenberghe, William; Verhulst, Anne; Groeseneken, Guido; Soree, Bart; Magnus, Wim (2008) -
Band-tails tunneling resolving the theory-experiment discrepancy in Esaki diodes
Bizindavyi, Jasper; Verhulst, Anne; Smets, Quentin; Verreck, Devin; Soree, Bart; Groeseneken, Guido (2018) -
Band-to-band tunneling MOSCAPs for rapid TFET characterization
Smets, Quentin; Verhulst, Anne; Lin, Dennis; Verreck, Devin; Merckling, Clement; El Kazzi, Salim; Martens, Koen; Raskin, Jean-Pierre; Thean, Aaron; Heyns, Marc (2014) -
Band-to-band tunneling off-state leakage in Ge fins and nanowires: effect of quantum confinement
Eneman, Geert; Verhulst, Anne; Smith, Lee; Moroz, Victor; De Keersgieter, An; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
Verhulst, Anne; Vandenberghe, William; Maex, Karen; Groeseneken, Guido (2008) -
Boosting the on-current of Si-based tunnel field-effect transistors
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
Boosting the on-current of Si-based tunnel field-effect transistors
Verhulst, Anne; Vandenberghe, William; Leonelli, Daniele; Rooyackers, Rita; Vandooren, Anne; Pourtois, Geoffrey; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2010) -
Boosting the on-current of silicon nanowire tunnel-FETs
Verhulst, Anne; Vandenberghe, William; De Gendt, Stefan; Maex, Karen; Groeseneken, Guido (2008)