Browsing by author "Verhulst, Anne"
Now showing items 21-40 of 162
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Boosting the Sensitivity of the Nanopore Field-Effect Transistor to Translocating Single Molecules
Verhulst, Anne; Ruic, Dino; Willems, Kherim; Van Dorpe, Pol (2022) -
Built-in sheet charge as an alternative to dopant pockets in tunnel field-effect transistors
Verreck, Devin; Verhulst, Anne; Xiang, Yang; Yakimets, Dmitry; El Kazzi, Salim; Parvais, Bertrand; Groeseneken, Guido; Collaert, Nadine; Mocuta, Anda (2018) -
Calibration of bulk trap-assisted tunneling and Shockley-Read-Hall currents and impact on InGaAs tunnel-FETs
Smets, Quentin; Verhulst, Anne; Simoen, Eddy; Gundlach, David; Richter, Curt; Collaert, Nadine; Heyns, Marc (2017) -
Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction
Smets, Quentin; Verhulst, Anne; El Kazzi, Salim; Gundlach, David; Richter, Curt; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Heyns, Marc (2016) -
Calibration of the high-doping induced ballistic band-tails tunneling current in In0.53Ga0.47As Esaki diodes
Bizindavyi, Jasper; Verhulst, Anne; Smets, Quentin; Verreck, Devin; Collaert, Nadine; Mocuta, Anda; Soree, Bart; Groeseneken, Guido (2017) -
Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?
Verhulst, Anne; Verreck, Devin; Pourghaderi, Mohammad Ali; Van de Put, Maarten; Soree, Bart; Groeseneken, Guido; Collaert, Nadine; Thean, Aaron (2014) -
Carbon nanotube interconnects: will there be a significant improvement compared to copper?
Verhulst, Anne; Bamal, Mandeep; Groeseneken, Guido (2007) -
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Verhulst, Anne; Walke, Amey; Favia, Paola; Douhard, Bastien; del Alamo, Jesus Del Alamo; Lu, Wenjie; Collaert, Nadine; Merckling, Clement (2018) -
Carrier profiling of a cross-sectioned silicon nanowire by scanning spreading resistance microscopy
Hantschel, Thomas; Schulz, Volker; Zschaetzsch, Gerd; Eyben, Pierre; Verhulst, Anne; Schmidt, Volker; Vereecken, Philippe; Van den Bosch, Geert; Vandervorst, Wilfried (2007) -
Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates
Verhulst, Anne; Vandenberghe, William; Maex, Karen; De Gendt, Stefan; Heyns, Marc; Groeseneken, Guido (2008) -
Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospects of strained SiGe tunneling field-effect transistors
Kao, Frank; Verhulst, Anne; Rooyackers, Rita; Douhard, Bastien; Delmotte, Joris; Bender, Hugo; Richard, Olivier; Vandervorst, Wilfried; Simoen, Eddy; Hikavyy, Andriy; Loo, Roger; Arstila, Kai; Collaert, Nadine; Thean, Aaron; Heyns, Marc; De Meyer, Kristin (2014) -
Considerations for further scaling of metal–insulator–metal DRAM capacitors
Kaczer, Ben; Clima, Sergiu; Tomida, Kazuyuki; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Kim, Min-Soo; Swerts, Johan; Wang, W. C.; Afanasiev, Valeri; Verhulst, Anne; Pourtois, Geoffrey; Groeseneken, Guido; Jurczak, Gosia (2013) -
Contrast reversal in scanning capacitance microscopy imaging
Stephenson, Robert; Verhulst, Anne; De Wolf, Peter; Caymax, Matty; Vandervorst, Wilfried (1998) -
Counterdoped pocket thickness optimization of tunnel field-effect transistors
Kao, Frank; Verhulst, Anne; Vandenberghe, William; De Meyer, Kristin (2013) -
Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations
Clima, Sergiu; Kaczer, Ben; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Swerts, Johan; Verhulst, Anne; Jurczak, Gosia; De Gendt, Stefan; Pourtois, Geoffrey (2013) -
Development of methodologies for characterizing individual carbon nanotubes and silicon nanowires for use in nanoelectronics technology
Hantschel, Thomas; Cott, Daire; Palanne, Saku; Richard, Olivier; Arstila, Kai; Verhulst, Anne; Schulz, Volker; Eyben, Pierre; Vandervorst, Wilfried (2008) -
Diameter-dependent boron diffusion in silicon nanowire-based transistors
Schulze, Andreas; Florakis, Antonios; Hantschel, Thomas; Eyben, Pierre; Verhulst, Anne; Rooyackers, Rita; Vandooren, Anne; Vandervorst, Wilfried (2013) -
Dielectric Response in Ferroelectrics Near Polarization Switching: Analytical Calculations, First-Principles Modeling, and Experimental Verification
Clima, Sergiu; Verhulst, Anne; Bagul, Pratik; Truijen, Brecht; McMitchell, Sean; De Wolf, Ingrid; Pourtois, Geoffrey; Van Houdt, Jan (2022) -
Digital-circuit analysis of short gate tunnel-FETs for low-voltage applications
Zhuge, Jing; Verhulst, Anne; Vandenberghe, William; Dehaene, Wim; Huang, Ru; Wang, YangYuan; Groeseneken, Guido (2011) -
Direct and indirect band-to-band tunneling in germanium-based TFETs
Kao, Frank; Verhulst, Anne; Vandenberghe, William; Soree, Bart; Groeseneken, Guido; De Meyer, Kristin (2012)