Browsing by author "Alam, M.A."
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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Alam, M.A.; Green, Martin; Ho, M.Y.; Vandervorst, Wilfried; Brijs, Bert; Conard, Thierry; Räisänen, P.I. (2002) -
Experimental identification of unique oxide defect regions by characteristic response of charge pumping
Masuduzzaman, M.; Islam, Ahmad; Degraeve, Robin; Cho, Moon Ju; Zahid, Mohammed; Alam, M.A. (2011-04) -
Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers
Alam, M.A.; Green, Martin (2003)