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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
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2032 since deposited on 2021-10-14
3last month
Acq. date: 2026-02-25
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Statistics
Views
2032 since deposited on 2021-10-14
3last month
Acq. date: 2026-02-25
Citations