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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Publication:
A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
Date
2002
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Alam, M.A.
;
Green, Martin
;
Ho, M.Y.
;
Vandervorst, Wilfried
;
Brijs, Bert
;
Conard, Thierry
;
Räisänen, P.I.
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2023
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
2023
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations