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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers
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2027 since deposited on 2021-10-14
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Acq. date: 2025-12-09
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Views
2027 since deposited on 2021-10-14
1last month
1last week
Acq. date: 2025-12-09
Citations