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A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers

Date

2002
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dc.contributor.authorAlam, M.A.
dc.contributor.authorGreen, Martin
dc.contributor.authorHo, M.Y.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBrijs, Bert
dc.contributor.authorConard, Thierry
dc.contributor.authorRäisänen, P.I.
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorConard, Thierry
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-14T21:06:59Z
dc.date.available2021-10-14T21:06:59Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5940
dc.source.conferenceMRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOS
dc.source.conferencedate2/12/2002
dc.source.conferencelocationBoston, MA USA
dc.title

A mathematical description of atomic layer deposition (ALD), and its application to the nucleation and growth of HfO2 gate dielectric layers

dc.typeOral presentation
dspace.entity.typePublication
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