Browsing by author "Billon, T."

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Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates

Meuris, Marc; De Jaeger, Brice; Van Steenbergen, Jan; Bonzom, Renaud; Caymax, Matty; Houssa, Michel; Kaczer, Ben; Leys, Frederik; Martens, Koen; Opsomer, Karl; Pourghaderi, Mohammad Ali; Satta, Alessandra; Simoen, Eddy; Terzieva, Valentina; Van Moorhem, Els; Winderickx, Gillis; Loo, Roger; Clarysse, Trudo; Conard, Thierry; Delabie, Annelies; Hellin, David; Janssens, Tom; Onsia, Bart; Sioncke, Sonja; Mertens, Paul; Snow, Jim; Van Elshocht, Sven; Vandervorst, Wilfried; Zimmerman, Paul; Brunco, David; Raskin, G.; Letertre, F.; Akatsu, T.; Billon, T.; Heyns, Marc (2007)
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

De Jaeger, Brice; Bonzom, Renaud; Leys, Frederik; Richard, Olivier; Van Steenbergen, Jan; Winderickx, Gillis; Van Moorhem, Els; Raskin, G.; Letertre, F.; Billon, T.; Meuris, Marc; Heyns, Marc (2005-06)