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Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates
Publication:
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates
Date
2005-06
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
De Jaeger, Brice
;
Bonzom, Renaud
;
Leys, Frederik
;
Richard, Olivier
;
Van Steenbergen, Jan
;
Winderickx, Gillis
;
Van Moorhem, Els
;
Raskin, G.
;
Letertre, F.
;
Billon, T.
;
Meuris, Marc
;
Heyns, Marc
Journal
Microelectronic Engineering
Abstract
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1954
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1954
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations