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Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

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1954 since deposited on 2021-10-16
Acq. date: 2025-10-23

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1954 since deposited on 2021-10-16
Acq. date: 2025-10-23

Citations