Browsing by author "Marek, Juraj"
Now showing items 1-6 of 6
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3-D device electrothermal simulation for analysis of multifinger power HEMTs
Chvála, Ale; Marek, Juraj; Satka, Alexander; Priesol, Juraj; Príbytnŭ, Patrik; Donoval, Daniel; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2018) -
DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs
Drobnŭ, Jakub; Marek, Juraj; Koza, A.; Vadovski, J.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices
Marek, Juraj; Mikoláek, Miroslav; Drobnŭ, Jakub; Kozarik, Jozef; Chvála, Ale; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation
Chvála, Ale; Marek, Juraj; Príbytnŭ, Patrik; atka, Alexander; Donoval, Daniel; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan (2017-09) -
Methodology and more accurate electrothermal model for fast simulation of power HEMTs
Chvála, Ale; Marek, Juraj; Cernaj, Lubo; Príbytnŭ, Patrik; atka, Alexander; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Donoval, Daniel (2018) -
Study of emission and capture processes in semi-vertical GaN-on-Si trench-MOSFETs
Drobnŭ, Jakub; Marek, Juraj; Kosa, A.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2021)