Browsing by author "Lin, Tsann"
Now showing items 1-20 of 28
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A Co/Ni-based perpendicular magnetic tunnel junction (p-MTJ) stack with improved reference layer for BEOL compatibility
Tomczak, Yoann; Lin, Tsann; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Sankaran, Kiroubanand; Pourtois, Geoffrey; Tsvetanova, Diana; Souriau, Laurent; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
Annealing stability of magnetic tunnel junctions no dual MgO free layers and Co/Ni based synthetic antiferromagnetic reference system
Devolder, Thibaut; Couet, Sebastien; Swerts, Johan; Liu, Enlong; Lin, Tsann; Mertens, Sofie; Kar, Gouri Sankar; Furnemont, Arnaud (2017) -
BEOLC compatiblehigh tunnel magneto resistance perpendicula magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Tomczak, Yoann; Sankaran, Kiroubanand; Pourtois, Geoffrey; Kim, Woojin; Meersschaut, Johan; Souriau, Laurent; Radisic, Dunja; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2015) -
CMP process steps for the fabrication of spin-transfer torque magnetic random access memory
Tsvetanova, Diana; Heylen, Nancy; Teugels, Lieve; Crotti, Davide; Donadio, Gabriele Luca; Kar, Gouri Sankar; Struyf, Herbert; Souriau, Laurent; Mertens, Sofie; Swerts, Johan; Couet, Sebastien; Lin, Tsann; Paraschiv, Vasile; Kim, Woojin; Rao, Siddharth (2016) -
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
Liu, Enlong; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Tomczak, Yoann; Lin, Tsann; Spampinato, Valentina; Franquet, Alexis; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; De Boeck, Jo (2016) -
Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy
Liu, Enlong; Swerts, Johan; Vaysset, Adrien; Devolder, Thibaut; Couet, Sebastien; Mertens, Sofie; Lin, Tsann; Van Elshocht, Sven; De Boeck, Jo; Kar, Gouri Sankar (2017) -
Control of interlayer exchange coupling and its impact on spin-torque switching of hybrid free layers with perpendicular magnetic anisotropy
Liu, Enlong; Vaysset, Adrien; Swerts, Johan; Devolder, Thibaut; Couet, Sebastien; Mertens, Sofie; Lin, Tsann; Van Elshocht, Sven; De Boeck, Jo; Kar, Gouri Sankar (2017) -
Cryogenic cooling post MgO promoting the free layer coercivity and TMR in perpendicular bottom pinned Co/Ni STT-MRAM device stacks
Swerts, Johan; Mertens, Sofie; Couet, Sebastien; Lin, Tsann; Liu, Enlong; Rao, Siddharth; Kim, Woojin; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; Nishimura, Kazumasa; Okuyama, Hiroki; Seino, Takuya; Tsunekawa, Koji (2016) -
Distinctive behavior of perpendicular magnetic tunnel junctions with size comparable to the electrical switching nucleation
Kim, Woojin; Rao, Siddharth; Van Beek, Simon; Garello, Kevin; Couet, Sebastien; Swerts, Johan; Mertens, Sofie; Lin, Tsann; Souriau, Laurent; Kundu, Shreya; Tsvetanova, Diana; Donadio, Gabriele Luca; Yasin, Farrukh; Sakhare, Sushil; Furnemont, Arnaud; Kar, Gouri Sankar (2017) -
Experimental observation of back-hopping with reference layer flipping by high-voltage pulse in perpendicular magnetic tunnel junctions
Kim, Woojin; Couet, Sebastien; Swerts, Johan; Lin, Tsann; Tomczak, Yoann; Souriau, Laurent; Tsvetanova, Diana; Sankaran, Kiroubanand; Donadio, Gabriele Luca; Crotti, Davide; Van Beek, Simon; Rao, Siddharth; Goux, Ludovic; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy
Devolder, Thibaut; Liu, Enlong; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Lin, Tsann; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; De Boeck, Jo (2016) -
Ferromagnetic resonance study of composite Co/Ni-FeCoB free layers with perpendicular anisotropy
Devolder, Thibaut; Liu, Enlong; Swerts, Johan; Couet, Sebastien; Lin, Tsann; Mertens, Sofie; Furnemont, Arnaud; Kar, Gouri Sankar; De Boeck, Jo (2016) -
Free layer effective anisotropy thickness in high TMR top and bottom pinned perpendicular magnetic tunnel junctions
Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Tomczak, Yoann; Liu, Enlong; Kim, Woojin; Kar, Gouri Sankar; Van Elshocht, Sven; Furnemont, Arnaud (2015) -
Impact of processing and stack optimization on the reliability of perpendicular STT-MRAM
Van Beek, Simon; Martens, Koen; Roussel, Philippe; Couet, Sebastien; Souriau, Laurent; Swerts, Johan; Kim, Woojin; Rao, Siddharth; Mertens, Sofie; Lin, Tsann; Crotti, Davide; Degraeve, Robin; Bury, Erik; Linten, Dimitri; Kar, Gouri Sankar; Groeseneken, Guido (2017) -
Impact of seed layer and its diffusion after annealing on properties of Co/Ni multilayers with perpendicular magnetic anisotropy
Liu, Enlong; Swerts, Johan; Devolder, Thibaut; Couet, Sebastien; Mertens, Sofie; Lin, Tsann; Conard, Thierry; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud; De Boeck, Jo (2016) -
Impact of Ta and W-based spacers in double MgO STTMRAM free layers on perpendicular anisotropy and damping
Couet, Sebastien; Devolder, Thibaut; Swerts, Johan; Mertens, Sofie; Lin, Tsann; Liu, Enlong; Van Elshocht, Sven; Kar, Gouri Sankar (2017) -
Influence of the reference layer composition on the back-end-of-line compatibility of Co/Ni-based perpendicular magnetic tunnel junction stacks
Tomczak, Yoann; Lin, Tsann; Swerts, Johan; Couet, Sebastien; Mertens, Sofie; Liu, Enlong; Kim, Woojin; Sankaran, Kiroubanand; Pourtois, Geoffrey; Tsvetanova, Diana; Souriau, Laurent; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
Magnetic tunnel junctions etch and encapsulation process optimization for high-density STT-MRAM applications
Souriau, Laurent; Radisic, Dunja; Kundu, Shreya; Paraschiv, Vasile; Yamashita, Fumiko; Fujimoto, Kiwamu; Tahara, Shigeru; Maeda, K.; Kim, Woojin; Rao, Siddharth; Donadio, Gabriele Luca; Crotti, Davide; Tsvetanova, Diana; Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Piumi, Daniele; Kar, Gouri Sankar; Furnemont, Arnaud (2016) -
Material developments and nanosecond-Scale Switching Process in
Devolder, Thibaut; Swerts, Johan; Couet, Sebastien; Kim, Woojin; Nikitin, Vladimir; Kim, Jon-Voo; Bouquin, Paul; Lin, Tsann; Mertens, Sofie; Kar, Gouri Sankar (2017) -
Oxygen scavenging by Ta spacers in double-MgO free layers for perpendicular spin-transfer torque magnetic random-access memory
Couet, Sebastien; Swerts, Johan; Mertens, Sofie; Lin, Tsann; Tomczak, Yoann; Liu, Enlong; Douhard, Bastien; Van Elshocht, Sven; Furnemont, Arnaud; Kar, Gouri Sankar (2016)