Browsing by author "Shin, Changhwan"
Now showing items 1-6 of 6
-
Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
Lee, Sumi; Ronchi, Nicolo; Bizindavyi, Jasper; Popovici, Mihaela Ioana; Banerjee, Kaustuv; Walke, Amey; Delhougne, Romain; Van Houdt, Jan; Shin, Changhwan (2023) -
Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices
Ronchi, Nicolo; McMitchell, Sean; Min, Jinhong; Banerjee, Kaustuv; Van den Bosch, Geert; Shin, Changhwan; Van Houdt, Jan (2020) -
Impact of interface layer on charge trapping in Si:HfO2 based FeF FT
Jung, Taehwan; O'Sullivan, Barry; Ronchi, Nicolo; Linten, Dimitri; Shin, Changhwan; Van Houdt, Jan (2020) -
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
Jung, Taehwan; O'Sullivan, Barry J.; Ronchi, Nicolo; Linten, Dimitri; Shin, Changhwan; Van Houdt, Jan (2021) -
Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
Min, Jinhong; Ronchi, Nicolo; O'Sullivan, Barry; Banerjee, Kaustuv; Van den Bosch, Geert; Van Houdt, Jan; Shin, Changhwan; McMitchell, Sean (2021) -
Study on memory characteristics of fin-shaped feedback field effect transistor
Han, Shinick; Kim, Younghyun; Son, Donghee; Baac, Hyoung Won; Won, Sang Min; Shin, Changhwan (2022)