Now showing items 1-3 of 3

    • Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65nm device mode 

      Montgomery, Patrick K.; Lucas, Kevin D.; Litt, Lloyd C.; Conley, Will; Fanucchi, Eric; van Wingerden, Johannes; Vandenberghe, Geert; Wiaux, Vincent; Taylor, Darren; Cangemi, Michael J.; Kasprowicz, Bryan (2003-12)
    • Mighty hight-t lithography for 65nm generation contacts 

      Conley, Will; Montgomery, Patrick; Lucas, Kevin; Litt, Lloyd C.; Maltabes, John G.; Dieu, Laurent; Hughes, Gregory P,; Mellenthin, David L.; Socha, Robert J.; Fanucchi, Eric L.; Verhappen, Arjan; Wampler, Kurt E.; Yu, Linda; Schaefer, Erika; Cassel, Shawn; Kuijten, Jan P.; Pijnenburg, Wil; Wiaux, Vincent; Vandenberghe, Geert (2003)
    • Process, design and optical proximity correction requirements for the 65nm device generation 

      Lucas, Kevin; Montgomery, Patrick; Litt, Lloyd C.; Conley, Will; Postnikov, Sergei V.; Wu, Wei; Yuan, Chi-Min; Olivares, Marc; Strozewski, Kirk; Carter, Russell L.; Vasek, James; Smith, David; Fanucchi, Eric L.; Wiaux, Vincent; Vandenberghe, Geert; Toublan, Olivier; Verhappen, Arjan; Kuijten, Jan P.; van Wingerden, Johannes; Kasprowicz, Bryan S.; Tracy, Jeffrey W.; Progler, Christopher J.; Shiro, Eugene; Topouzov, Igor; Wimmer, Karl; Roman, Bernard J. (2003)