Browsing by author "Fiegna, Claudio"

A distributed electrical model for interdigitated back contact silicon solar cells

Giaffreda, Daniele; Debucquoy, Maarten; Magnone, Paolo; Posthuma, Niels; Fiegna, Claudio (2014)

Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs

Tallarico, Andrea; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio (2017)

Optimization of rear point contact geometry by means of 3-D numerical simulation

De Rose, Raffaele; Van Wichelen, Koen; Tous, Loic; Das, Jo; Dross, Frederic; Fiegna, Claudio; Lanuzza, M.; Sangiorgio, E.; Uruena De Castro, Angel; Zanuccoli, M (2012)

PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms

Tallarico, Andrea; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio (2018)

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04)

Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation

Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio (2019)

Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence

Tallarico, Andrea; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio (2016)

Understanding the influence of busbars in large-area IBC solar cells by distributed SPICE simulations

Magnone, Paolo; Debucquoy, Maarten; Giaffreda, Daniele; Posthuma, Niels; Fiegna, Claudio (2015)