Browsing by author "Shi, Yuanyuan"
Now showing items 1-16 of 16
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Advanced Data Encryption using 2D Materials
Wen, Chao; Li, Xuehua; Zanotti, Tommaso; Puglisi, Francesco Maria; Shi, Yuanyuan; Saiz, Fernan; Antidormi, Aleandro; Roche, Stephan; Zheng, Wenwen; Liang, Xianhu; Hu, Jiaxin; Duhm, Steffen; Roldan, Juan B.; Wu, Tianru; Chen, Victoria; Pop, Eric; Garrido, Blas; Zhu, Kaichen; Hui, Fei; Lanza, Mario (2021) -
ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices
Wu, Xiangyu; Lin, Dennis; Cott, Daire; De Marneffe, Jean-Francois; Groven, Benjamin; Sergeant, Stefanie; Shi, Yuanyuan; Smets, Quentin; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana (2021) -
Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface
Kandybka, Iryna; Groven, Benjamin; Medina Silva, Henry; Sergeant, Stefanie; Nalin Mehta, Ankit; Koylan, Serkan; Shi, Yuanyuan; Banerjee, Sreetama; Morin, Pierre; Delabie, Annelies (2024) -
Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism
Serron, Jill; Minj, Albert; Spampinato, Valentina; Franquet, Alexis; Rybalchenko, Yevhenii; Boulon, Marie-Emmanuelle; Brems, Steven; Shi, Yuanyuan; Groven, Benjamin; Villarreal, Renan; Conard, Thierry; van der Heide, Paul; Hantschel, Thomas; Medina Silva, Henry (2023-05-17) -
Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
Wu, Xiangyu; Cott, Daire; Lin, Zaoyang; Shi, Yuanyuan; Groven, Benjamin; Morin, Pierre; Verreck, Devin; Smets, Quentin; Medina, Henry; Sutar, Surajit; Asselberghs, Inge; Radu, Iuliana; Lin, Dennis (2021) -
Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics
Shi, Yuanyuan; Groven, Benjamin; Serron, Jill; Wu, Xiangyu; Nalin Mehta, Ankit; Minj, Albert; Sergeant, Stefanie; Han, Han; Asselberghs, Inge; Lin, Dennis; Brems, Steven; Huyghebaert, Cedric; Morin, Pierre; Radu, Iuliana; Caymax, Matty (2021) -
Extreme scaling enabled by MX2 transistors: variability challenges (invited)
Smets, Quentin; Arutchelvan, Goutham; Schram, Tom; Verreck, Devin; Groven, Benjamin; Cott, Daire; Ahmed, Zubair; Shi, Yuanyuan; Sutar, Surajit; Nalin Mehta, Ankit; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2021) -
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks
Maldonado, D.; Roldan, J. B.; Roldan, A. M.; Jimenez-Molinos, F.; Hui, F.; Jing, Xu; Wen, C.; Lanza, M.; Shi, Yuanyuan (2020) -
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages
Roldan, J. B.; Maldonado, D.; Jimenez-Molinos, F.; Acal, C.; Ruiz-Castro, J. E.; Aguilera, A. M.; Hui, F.; Kong, J.; Jing, X.; Wed, C.; Villena, M. A.; Lanza, M.; Shi, Yuanyuan (2020) -
Sources of variability in scaled MoS2 FETs
Smets, Quentin; Verreck, Devin; Shi, Yuanyuan; Arutchelvan, Goutham; Groven, Benjamin; Wu, Xiangyu; Sutar, Surajit; Banerjee, Sreetama; Nalin Mehta, Ankit; Lin, Dennis; Asselberghs, Inge; Radu, Iuliana (2020) -
Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening
Shi, Yuanyuan; Groven, Benjamin; Smets, Quentin; Sutar, Surajit; Banerjee, Sreetama; Medina, Henry; Wu, Xiangyu; Huyghebaert, Cedric; Brems, Steven; Lin, Dennis; Morin, Pierre; Caymax, Matty; Asselberghs, Inge; Radu, Iuliana (2021) -
Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching
Lanza, Mario; Palumbo, Felix; Shi, Yuanyuan; Aguirre, Fernando; Boyeras, Santiago; Yuan, Bin; Yalon, Eilam; Moreno, Enrique; Wu, Tianru; Roldan, Juan B. (2022) -
The sapphire surface structure and its impact on MOCVD grown wafer-scale MoS2 uniformity and MOSFET variability
Shi, Yuanyuan; Groven, Benjamin; Serron, Jill; Han, Han; Banerjee, Sreetama; Wu, Xiangyu; Ludwig, Jonathan; Asselberghs, Inge; Lin, Dennis; Morin, Pierre; Caymax, Matty; Radu, Iuliana (2019) -
Time series modeling of the cycle-to-cycle variability in h-BN based memristors
Roldan, J. B.; Maldonado, D.; Alonso, F. J.; Roldan, A. M.; Hui, F.; Jimenez-Molinos, F.; Aguilera, A. M.; Lanza, M.; Shi, Yuanyuan (2021) -
Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides
Lin, Zaoyang; Wu, Xiangyu; Cott, Daire; Shi, Yuanyuan; Medina Silva, Henry; Sergeant, Stefanie; Conard, Thierry; Meersschaut, Johan; Nalin Mehta, Ankit; Groven, Benjamin; Morin, Pierre; Asselberghs, Inge; Lockhart de la Rosa, Cesar Javier; Kar, Gouri Sankar; Lin, Dennis; Delabie, Annelies (2024)