Now showing items 1-3 of 3

    • A low-power multi-gate FET CMOS technology with 13.9ps inverter delay, large-scale integrated high performance digital circuits and SRAM 

      von Arnim, Klaus; Augendre, Emmanuel; Pacha, C.; Schulz, Thomas; San, Kemal Tamer; Bauer, F.; Nackaerts, Axel; Rooyackers, Rita; Vandeweyer, Tom; Degroote, Bart; Collaert, Nadine; Dixit, Abhisek; Singanamalla, Raghunath; Xiong, W.; Marshall, A.; Cleavelin, C.R.; Schrüfer, K.; Jurczak, Gosia (2007)
    • Multi-gate devices for the 32nm technology node and beyond 

      Collaert, Nadine; De Keersgieter, An; Dixit, Abhisek; Ferain, Isabelle; Lai, Li-Shyue; Lenoble, Damien; Mercha, Abdelkarim; Nackaerts, Axel; Pawlak, Bartek; Rooyackers, Rita; Schulz, Thomas; San, Kemal Tamer; Son, Nak Jin; Van Dal, Mark; Verheyen, Peter; von Arnim, Klaus; Witters, Liesbeth; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia (2007)
    • Multi-gate devices for the 32nm technology node and beyond 

      Collaert, Nadine; De Keersgieter, An; Dixit, Abhisek; Ferain, Isabelle; Lai, Li-Shyue; Lenoble, Damien; Mercha, Abdelkarim; Nackaerts, Axel; Pawlak, Bartek; Rooyackers, Rita; Schulz, Thomas; San, Kemal Tamer; Son, Nak Jin; Van Dal, Mark; Verheyen, Peter; von Arnim, Klaus; Witters, Liesbeth; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia (2008)