Browsing by author "Komura, Masanori"
Now showing items 1-4 of 4
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Engineering of Hf1-xAlxOy amorphous dielectrics for high-performance RRAM applications
Fantini, Andrea; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Adelmann, Christoph; Polimeni, Giuseppe; Chen, Yangyin; Komura, Masanori; Belmonte, Attilio; Wouters, Dirk; Jurczak, Gosia (2014) -
Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
Chen, Yangyin; Komura, Masanori; Degraeve, Robin; Govoreanu, Bogdan; Goux, Ludovic; Fantini, Andrea; Raghavan, Naga; Clima, Sergiu; Zhang, Leqi; Belmonte, Attilio; Redolfi, Augusto; Kar, Gouri Sankar; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants
Chen, Yangyin; Roelofs, Robin; Redolfi, Augusto; Degraeve, Robin; Crotti, Davide; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Komura, Masanori; Goux, Ludovic; Zhang, Leqi; Belmonte, Attilio; Xie, Qi; Maes, Jan; Pourtois, Geoffrey; Jurczak, Gosia (2014) -
Understanding the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation
Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Raghavan, Naga; Nigon, Robin; Strangio, Sebastiano; Wouters, Dirk; Govoreanu, Bogdan; Chen, Yangyin; Komura, Masanori; De Stefano, Francesca; Afanasiev, Valeri; Jurczak, Gosia (2013)