Authors

Chen, Yangyin; Roelofs, Robin; Redolfi, Augusto; Degraeve, Robin; Crotti, Davide; Fantini, Andrea; Clima, Sergiu; Govoreanu, Bogdan; Komura, Masanori; Goux, Ludovic; Zhang, Leqi; Belmonte, Attilio; Xie, Qi; Maes, Jan; Pourtois, Geoffrey; Jurczak, Gosia

Conference

IEEE Symposium on VLSI Technology

Title

Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants

Publication type

Proceedings paper

Embargo date

9999-12-31