Browsing by author "Mukhopadhyay, Subhadeep"
Now showing items 1-3 of 3
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Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices
Mukhopadhyay, Subhadeep; Franco, Jacopo; Vaisman Chasin, Adrian; Roussel, Philippe; Kaczer, Ben; Groeseneken, Guido; Horiguchi, Naoto; Linten, Dimitri; Thean, Aaron (2016) -
NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal
Franco, Jacopo; Kaczer, Ben; Vaisman Chasin, Adrian; Mertens, Hans; Ragnarsson, Lars-Ake; Ritzenthaler, Romain; Mukhopadhyay, Subhadeep; Arimura, Hiroaki; Roussel, Philippe; Bury, Erik; Horiguchi, Naoto; Linten, Dimitri; Groeseneken, Guido; Thean, Aaron (2016) -
Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs
Franco, Jacopo; Kaczer, Ben; Mukhopadhyay, Subhadeep; Duhan, Pardeep; Weckx, Pieter; Roussel, Philippe; Chiarella, Thomas; Ragnarsson, Lars-Ake; Trojman, Lionel; Horiguchi, Naoto; Spessot, Alessio; Linten, Dimitri; Mocuta, Anda (2016)