Browsing by author "Gaquiere, C."

ANN model for AlGaN/GaN HEMTs constructed from near-optimal-load large-signal measurements

Schreurs, Dominique; Verspecht, Jan; Vandamme, E.; Vellas, N.; Gaquiere, C.; Germain, Marianne; Borghs, Gustaaf (2003)

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

Werquin, M.; Vellas, N.; Guhel, Y.; Ducatteau, D.; Boudart, B.; Pesant, J.C.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C.; Gaquiere, C. (2005)

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Werquin, W.; Gaquiere, C.; Guhel, Y.; Vellas, N.; Theron, D.; Boudart, B.; Hoel, V.; Germain, Marianne; de Jaeger, J.C.; Delage, S. (2005)

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Guhel, Y.; Boudart, B.; Vellas, N.; Gaquiere, C.; Delos, E.; Ducatteau, D.; Bougrioua, Z.; Germain, Marianne (2005)

Influence d'une passivation précédée d'un traitement de surface sur le comportement électrique en regime statique d'un HEMT AlGaN/GaN

Guhel, Y.; Boudart, B.; Vellas, N.; Gaquiere, C.; Delos, E.; Ducateau, D.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C. (2003)

Microwave performances on gallium nitride based HEMT devices

Gaquiere, C.; Vellas, N.; Werquin, M.; Ducatteau, D.; Delos, E.; Chartier, E.; Lancereau, D.; Gerard, H.; Di Forte-Poisson, M.A.; Cordier, Y.; Germain, Marianne; Morvan, E.; Grimbert, B.; Caillas, N.; Hoel, V.; Theron, D.; Aubry, R.; Jacquet, J.C.; de Jaeger, J.C.; Delage, S.L. (2004)

Premiers résultats de puissance à 4GHz obtenus sur HEMTs AlGaN/GaN en technologie planar

Vellas, N.; Guhel, Y.; Gaquiere, C.; Boudart, B.; Pesant, J.C.; Bougrioua, Z.; Germain, Marianne; de Jaeger, J.C. (2003)

Towards High Performance E-Mode InAIN/GaN HEMTs

Medjdoub, Farid; Alomari, A.; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Py, M.A.; Gaquiere, C.; Grandjean, N.; Kohn, E. (2008)