Browsing by author "Heuken, Michael"
Now showing items 1-10 of 10
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Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, Karen; Herwig, Hahn; Liang, Hu; Borga, Matteo; Cingu, Deepthi; You, Shuzhen; Marx, Matthias; Oligschlaeger, Robert; Fahle, Dirk; Heuken, Michael; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Decoutere, Stefaan (2021) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Posthuma, Niels; Heuken, Michael (2016) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Heuken, Michael (2016) -
Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT
Martin, Eickelkamp; Fahle, Dirk; Mauder, Christof; Zhao, Ming; Liang, Hu; Posthuma, Niels; Van Hove, Marleen; Heuken, Michael (2017) -
Growth of III/V materials on large area silicon
Schineller, Bernd; Nguyen, Duy; Heuken, Michael (2010) -
Integration of 650 V GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Heuken, Michael; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020) -
Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition
Tang, Haonan; Pasko, Sergej; Krotkus, Simonas; Anders, Thorsten; Wockel, Cornelia; Mischke, Jan; Wang, Xiaochen; Conran, Ben; McAleese, Clifford; Teo, Ken; Banerjee, Sreetama; Medina Silva, Henry; Morin, Pierre; Asselberghs, Inge; Ghiami, Amir; Grundmann, Annika; Tang, Songyao; Fiadziushkin, Hleb; Kalisch, Holger; Vescan, Andrei; El Kazzi, Salim; Marty, Alain; Dosenovic, Djordje; Okuno, Hanako; Le Van-Jodin, Lucie; Heuken, Michael (2023) -
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
Cavalcoli, Daniela; Minj, Albert; Fazio, Maria; Cros, Ana; Heuken, Michael (2020) -
Vertical GaN devices: Process and reliability
You, Shuzhen; Geens, Karen; Borga, Matteo; Liang, Hu; Hahn, Herwig; Fahle, Dirk; Heuken, Michael; Mukherjee, Kalparupa; De Santi, Carlo; Meneghini, Matteo; Zanoni, Enrico; Berg, Martin; Ramvall, Peter; Kumar, Ashutosh; Bjork, Mikael T.; Ohlsson, B. Jonas; Decoutere, Stefaan (2021)