Browsing by author "Daté, L."
Now showing items 1-2 of 2
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Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon
Van Elshocht, Sven; Caymax, Matty; De Gendt, Stefan; Conard, Thierry; Petry, Jasmine; Claes, Martine; Witters, Thomas; Zhao, Chao; Brijs, Bert; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Carter, Richard; Kluth, Jon; Daté, L.; Pique, D.; Heyns, Marc (2003) -
High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies
Caymax, Matty; Bender, Hugo; Brijs, Bert; Conard, Thierry; De Gendt, Stefan; Delabie, Annelies; Heyns, Marc; Onsia, Bart; Ragnarsson, Lars-Ake; Richard, Olivier; Vandervorst, Wilfried; Van Elshocht, Sven; Zhao, Chao; Maes, J.W.; Daté, L.; Pique, D.; Young, E.; Tsai, W.; Shimamoto, Y. (2003)