Browsing by imec author "f12f09c785d5fe08af46f250b11669f1a2d5e042"
Now showing items 1-10 of 10
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15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors
Verreck, Devin; Van de Put, Maarten; Verhulst, Anne; Soree, Bart; Magnus, Wim; Dabral, Ashish; Thean, Aaron; Groeseneken, Guido (2015) -
A systematic study of various 2D materials in the light of defect formation and oxidation
Dabral, Ashish; Lu, A.K.A.; Chiappe, D.; Houssa, Michel; Pourtois, Geoffrey (2019) -
Contact resistivities at graphene/MoS2 lateral heterojunctions
Houssa, Michel; Iordanidou, K.; Dabral, Ashish; Lu, A.; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2018) -
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS2 lattice
Nalin Mehta, Ankit; Mo, Jiongjiong; Pourtois, Geoffrey; Dabral, Ashish; Groven, Benjamin; Bender, Hugo; Favia, Paola; Caymax, Matty; Vandervorst, Wilfried (2020) -
Interface control of 2D materials to enable wafer scale transfer and tuning of electronic properties
Chiappe, Daniele; Leonhardt, Alessandra; Lockhart de la Rosa, Cesar Javier; Asselberghs, Inge; Virkki, Olli; Celano, Umberto; Perucchini, Marta; Dabral, Ashish; Conard, Thierry; Afanasiev, Valeri; Pourtois, Geoffrey; Brems, Steven; Huyghebaert, Cedric; Caymax, Matty; De Gendt, Stefan; Radu, Iuliana (2017) -
Layer-controlled, wafer-scale fabrication of 2D semiconductor materials
Chiappe, Daniele; Afanasiev, Valeri; Tomczak, Yoann; Sutar, Surajit; Leonhardt, Alessandra; Ludwig, Jonathan; Celano, Umberto; Brems, Steven; Dabral, Ashish; Pourtois, Geoffrey; Caymax, Matty; Schram, Tom; Huyghebaert, Cedric; Asselberghs, Inge; De Gendt, Stefan; Radu, Iuliana (2018) -
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations
Pourtois, Geoffrey; Dabral, Ashish; Sankaran, Kiroubanand; Magnus, Wim; Yu, Hao; de Jamblinne de Meux, Albert; Lu, Augustin; Clima, Sergiu; Stokbro, Kurt; Schaekers, Marc; Houssa, Michel; Collaert, Nadine; Horiguchi, Naoto (2017) -
Structural characterization of SnS crystals formed by chemical vapour deposition
Nalin Mehta, Ankit; Zhang, Haodong; Dabral, Ashish; Richard, Olivier; Favia, Paola; Bender, Hugo; Delabie, Annelies; Caymax, Matty; Houssa, Michel; Pourtois, Geoffrey; Vandervorst, Wilfried (2017-12) -
Titanium (germano-)silicides featuring 10-9 $Xcm2 contact resistivity and improved compatibility to advanced CMOS technology
Yu, Hao; Schaekers, Marc; Chew, Soon Aik; Everaert, Jean-Luc; Dabral, Ashish; Pourtois, Geoffrey; Horiguchi, Naoto; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin (2018) -
Tuning of electrical properties in few layer CVD MoS2 through reduction of ambient exposure
Leonhardt, Alessandra; Chiappe, Daniele; Asselberghs, Inge; Pinna, Nicolo; Dabral, Ashish; Nalin Mehta, Ankit; Conard, Thierry; Meersschaut, Johan; Huyghebaert, Cedric; Radu, Iuliana; De Gendt, Stefan (2017)