Browsing by author "Tallarico, Andrea"
Now showing items 1-8 of 8
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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Rossetto, Isabella; Meneghini, Matteo; Canato, E.; Barbato, M.; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Tallarico, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Gate reliability of p-GaN HEMT with gate metal retraction
Tallarico, Andrea; Stoffels, Steve; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Sangiorgi, E; Fiegna, C (2019) -
Improving Time-Dependent Gate Breakdown of GaN HEMTs with p-type Gate
Tallarico, Andrea; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Fiegna, C; Sangiorgi, E (2021) -
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
Tallarico, Andrea; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio (2017) -
PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms
Tallarico, Andrea; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio (2018) -
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs
Tallarico, Andrea; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Sangiorgi, E; Fiegna, C (2020) -
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
Hu, Jie; Stoffels, Steve; Lenci, Silvia; De Jaeger, Brice; Ronchi, Nicolo; Tallarico, Andrea; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan (2016) -
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence
Tallarico, Andrea; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio (2016)