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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
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Authors
Rossetto, Isabella
;
Meneghini, Matteo
;
Canato, E.
;
Barbato, M.
;
Stoffels, Steve
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Tallarico, Andrea
;
Meneghesso, Gaudenzio
;
Zanoni, Enrico
ISSN
0026-2714
Journal
Microelectronics Reliability
Volume
76-77
Title
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Publication type
Journal article
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