Publication:

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

Date

2017

Journal article

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Author(s)

Rossetto, Isabella

;

Meneghini, Matteo

;

;

;

Stoffels, Steve

;

Posthuma, Niels

;

Decoutere, Stefaan

;

Tallarico, Andrea

;

Meneghesso, Gaudenzio

;

Journal

Microelectronics Reliability

Statistics

2002 since deposited on 2021-10-24

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Acq. date: 2026-03-17