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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
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Date
2017
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rossetto, Isabella
;
Meneghini, Matteo
;
Canato, E.
;
Barbato, M.
;
Stoffels, Steve
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Tallarico, Andrea
;
Meneghesso, Gaudenzio
;
Zanoni, Enrico
Journal
Microelectronics Reliability
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1997
since deposited on 2021-10-24
1
last month
Acq. date: 2025-12-11
Citations
Metrics
Views
1997
since deposited on 2021-10-24
1
last month
Acq. date: 2025-12-11
Citations