Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

dc.contributor.author	Rossetto, Isabella
dc.contributor.author	Meneghini, Matteo
dc.contributor.author	Canato, E.
dc.contributor.author	Barbato, M.
dc.contributor.author	Stoffels, Steve
dc.contributor.author	Posthuma, Niels
dc.contributor.author	Decoutere, Stefaan
dc.contributor.author	Tallarico, Andrea
dc.contributor.author	Meneghesso, Gaudenzio
dc.contributor.author	Zanoni, Enrico
dc.contributor.imecauthor	Stoffels, Steve
dc.contributor.imecauthor	Posthuma, Niels
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	Posthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-10-24T12:26:35Z
dc.date.available	2021-10-24T12:26:35Z
dc.date.issued	2017
dc.identifier.issn	0026-2714
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/29326
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0026271417302494
dc.source.beginpage	298
dc.source.endpage	303
dc.source.journal	Microelectronics Reliability
dc.source.volume	76-77
dc.title	Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
dc.type	Journal article
dspace.entity.type	Publication
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