Browsing by author "Kraitchinskii, A."
Now showing items 1-16 of 16
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A deep level study of high-temperature electron-irradiated n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V. (2004) -
A deep level study of high-temperature electron-irradiated n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tishenko, V.; Voitovich, V. (2003) -
Behavior of n-Si electrical parameters after a high-temperature 1 MeV electron irradiation
Neimash, V.; Kraitchinskii, A.; Kras'ko, N.; Voitovych, V.; Simoen, Eddy; Claeys, Cor (2002) -
Deep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon
Simoen, Eddy; Claeys, Cor; Neimash, V. B.; Kraitchinskii, A.; Kras'ko, N.; Puzenko, O.; Blondeel, A.; Clauws, P. (2000) -
DLTS studies of high-temperature electron irradiated Cz n-Si
Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytivych, V.; Tishenko, V.; Simoen, Eddy; Rafi, Joan Marc; Claeys, Cor; Versuys, J.; De Gryse, O.; Clauws, P. (2004) -
Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
David, Marie-Laure; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Kabaldin, A.; Barbot, J.F. (2005) -
High-temperature electron irradiation effects on the electrical parameters of n-type Cz silicon
Neimash, V.; Kraitchinskii, A.; Kras'ko, N.; Tischenko, V.; Voitovych, V.; Simoen, Eddy; Claeys, Cor (2002) -
High-temperature electron-irradiation induced deep levels in n-type Cz silicon
Simoen, Eddy; Claeys, Cor; Neimash, V.; Kraitchinskii, A.; Kras'ko, M.; Tischenko, V.; Voitovych, V.; Versluys, J.; Clauws, P. (2003) -
Identification of Sn-V related acceptor levels in irradiated tin-doped n-type silicon
Simoen, Eddy; Claeys, Cor; Neimash, V. B.; Kraitchinskii, A.; Kras'ko, M.; Puzenko, O.; Blondeel, A.; Clauws, P.; Pattyn, Hugo; Koops, G.E.J.; Pattyn, H. (2000) -
Influence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 degrees C
Neimash, V. B.; Kraitchinskii, A.; Kras'ko, M.; Puzenko, O.; Claeys, Cor; Simoen, Eddy; Svensson, B.; Kuznetsov, A. (2000) -
On the effect of lead on irradiation induced defects in silicon
David, M.L.; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Kabaldin, A.; Barbot, J.F. (2005) -
Oxygen precipitation and thermal donor formation in Pb and C-doped n-type Czochralski silicon
Neimash, M.V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Kabaldin, O.; Tsmots, V.; Simoen, Eddy; Claeys, Cor (2004-10) -
Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
David, Marie-Laure; Simoen, Eddy; Claeys, Cor; Neimash, V.; Kras'ko, M.; Kraitchinskii, A.; Voytovych, V.; Tishchenko, V.; Barbot, J.F. (2004) -
Tin doping effects in silicon
Simoen, Eddy; Claeys, Cor; Neimash, V. B.; Kraitchinskii, A.; Kras'ko, M.; Puzenko, O.; Blondeel, A.; Clauws, P. (2000) -
Tin doping of silicon for controlling oxygen precipitation and radiation hardness
Claeys, Cor; Simoen, Eddy; Neimash, V. B.; Kraitchinskii, A.; Krask'o, M.; Puzenko, O.; Blondeel, A.; Clauws, P. (2001) -
Tin-related deep levels in proton-irradiated n-type silicon
Simoen, Eddy; Claeys, Cor; Neimash, V. B.; Kraitchinskii, A.; Kras'ko, M.; Puzenko, O.; Blondeel, A.; Clauws, P.; Koops, G.E.J.; Pattyn, H. (2000)