Browsing by author "Stampfer, B."
Now showing items 1-5 of 5
-
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Grasser, T.; Stampfer, B.; Waltl, M.; Rzepa, G.; Rupp, K.; Schanovsky, F.; Pobegen, G.; Puschkarsky, K.; Reisinger, H.; O'Sullivan, Barry; Kaczer, Ben (2018) -
Efficient physical defect model applied to PBTI in high-k stacks
Rzepa, G.; Franco, Jacopo; Subirats, Alexandre; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Waltl, M.; Knobloch, T.; Stampfer, B.; Chiarella, Thomas; Horiguchi, Naoto; Ragnarsson, Lars-Ake; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2017) -
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS
Michl, J.; Grill, Alexander; Stampfer, B.; Waldhoer, D.; Schleich, C.; Knobloch, T.; Ioannidis, E.; Enichlmair, H.; Minixhofer, R.; Kaczer, Ben; Parvais, Bertrand; Govoreanu, Bogdan; Radu, Iuliana; Grasser, T.; Waltl, M. (2021) -
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
Grasser, T.; Waltl, M.; Puschkarsky, K.; Stampfer, B.; Rzepa, G.; Pobegen, G.; Reisinger, H.; Arimura, Hiroaki; Kaczer, Ben (2017) -
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release
Grasser, T.; Rzepa, G.; Stampfer, B.; Waltl, M.; Kaczer, Ben; O'Sullivan, Barry (2020)