Browsing by author "Minari, Hideki"

Defect formation in III-V fin grown by aspect ratio trapping technique: a first-principles study

Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Pourtois, Geoffrey; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty (2014)

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Caymax, Matty; Pourtois, Geoffrey (2014)

First-principles studies of the defect formation in III-V FETs grown by aspect ratio trapping

Minari, Hideki; Yoshida, Shinichi; Sawada, Ken; Nakazawa, Masashi; Caymax, Matty; Merckling, Clement; Waldron, Niamh; Guo, Weiming; Jiang, Sijia; Collaert, Nadine; Simoen, Eddy; Lin, Dennis; Pourtois, Geoffrey (2014)

The impact of energy barrier height on border traps in III-V gate stacks

Yoshida, S.; Taniguchi, S.; Minari, Hideki; Lin, Dennis; Ivanov, Tsvetan; Watanabe, H.; Nakazawa, Masashi; Collaert, Nadine; Thean, Aaron (2015)