Browsing by author "Demeulemeester, J."
Now showing items 1-7 of 7
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Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, O.; Sakai, A.; Zaima, S. (2010) -
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, Benjamin; Shimura, Y.; Takeuchi, S.; Nishimura, T.; Demeulemeester, J.; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010) -
Formation of self-organized nanodots on GaN surface by Ar-ion implantation
Som, Tapobrata; Pereira, L.; Skeren, T.; Demeulemeester, J.; Franquet, Alexis; Temst, K.; Vantomme, Andre (2010) -
Formation of self-organized nanodots on GaN surface by Ar-ion implantation
Som, Tapobrata; Pereira, L.; Skeren, T.; Demeulemeester, J.; Franquet, Alexis; Temst, K.; Vantomme, Andre (2010) -
GeSn technology: impact of Sn on Ge CMOS applications
Zaima, S.; Nakatsuka, O.; Shimura, Y.; Adachi, M.; Nakamura, M.; Takeuchi, S.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Caymax, Matty; Loo, Roger (2011) -
GeSn Technology: Impact of Sn on Ge CMOS Applications
Zaima, S.; Natasuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Caymax, Matty; Loo, Roger (2011) -
Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): Nucleation and solid solubility of the monosilicides
Schrauwen, A.; Demeulemeester, J.; Deduytsche, D.; Devulder, Wouter; Detavernier, C.; Comrie, C.M.; Temst, Kristiaan; Vantomme, Andre (2017)