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Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Publication:
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
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Date
2010
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Takeuchi, S.
;
Shimura, Y.
;
Nishimura, T.
;
Vincent, Benjamin
;
Eneman, Geert
;
Clarysse, Trudo
;
Demeulemeester, J.
;
Temst, K.
;
Vantomme, Andre
;
Dekoster, Johan
;
Caymax, Matty
;
Loo, Roger
;
Nakatsuka, O.
;
Sakai, A.
;
Zaima, S.
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1970
since deposited on 2021-10-18
Acq. date: 2026-01-10
Citations
Metrics
Views
1970
since deposited on 2021-10-18
Acq. date: 2026-01-10
Citations