Publication:

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

Date

2010
Meeting abstract
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dc.contributor.authorTakeuchi, S.
dc.contributor.authorShimura, Y.
dc.contributor.authorNishimura, T.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeulemeester, J.
dc.contributor.authorTemst, K.
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, O.
dc.contributor.authorSakai, A.
dc.contributor.authorZaima, S.
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T22:09:32Z
dc.date.available2021-10-18T22:09:32Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18062
dc.source.beginpage1909
dc.source.conference218th ECS Meeting
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
dc.title

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

dc.typeMeeting abstract
dspace.entity.typePublication
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