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Conference contributions
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vincent, Benjamin
;
Shimura, Y.
;
Takeuchi, S.
;
Nishimura, T.
;
Demeulemeester, J.
;
Eneman, Geert
;
Clarysse, Trudo
;
Vantomme, Andre
;
Nakatsuka, O.
;
Zaima, S.
;
Dekoster, Johan
;
Caymax, Matty
;
Loo, Roger
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1934
since deposited on 2021-10-19
Acq. date: 2025-12-10
Citations
Metrics
Views
1934
since deposited on 2021-10-19
Acq. date: 2025-12-10
Citations