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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
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Authors
Vincent, Benjamin
;
Shimura, Y.
;
Takeuchi, S.
;
Nishimura, T.
;
Demeulemeester, J.
;
Eneman, Geert
;
Clarysse, Trudo
;
Vantomme, Andre
;
Nakatsuka, O.
;
Zaima, S.
;
Dekoster, Johan
;
Caymax, Matty
;
Loo, Roger
Conference
E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of III-V Materials
Title
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
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Meeting abstract
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