Publication:

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Date

2010

Meeting abstract

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Author(s)

Vincent, Benjamin

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Demeulemeester, J.

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Clarysse, Trudo

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Vantomme, Andre

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Dekoster, Johan

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Statistics

1941 since deposited on 2021-10-19

Acq. date: 2026-05-30