Publication:

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Date

2010
Meeting abstract
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dc.contributor.authorVincent, Benjamin
dc.contributor.authorShimura, Y.
dc.contributor.authorTakeuchi, S.
dc.contributor.authorNishimura, T.
dc.contributor.authorDemeulemeester, J.
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVantomme, Andre
dc.contributor.authorNakatsuka, O.
dc.contributor.authorZaima, S.
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-19T00:03:05Z
dc.date.available2021-10-19T00:03:05Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18304
dc.source.conferenceE-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of III-V Materials
dc.source.conferencedate7/06/2010
dc.source.conferencelocationStrasbourg France
dc.title

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

dc.typeMeeting abstract
dspace.entity.typePublication
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