Browsing by author "Cheng, Kai"
Now showing items 21-40 of 94
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Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Boeykens, Steven; Derluyn, Joff; Germain, Marianne; Engelen, Jan; Borghs, Gustaaf (2005) -
Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy
Zhang, Liyang; Cheng, Kai; Liang, Hu; Lieten, Ruben; Latkowska, Magdalena; Baranowski, Michal; Kudrawiec, Robert; Misiewicz, Jan; Dekoster, Johan; Borghs, Gustaaf (2012) -
Enhancement of GaN-based device robustness by means of in-situ SiN cap layer
Medjdoub, Farid; Marcon, Denis; Cheng, Kai; Van Hove, Marleen; Leys, Maarten; Decoutere, Stefaan (2010) -
Epitaxial growth of III-nitrides on silicon substrates
Degroote, Stefan; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Derluyn, Joff; Borghs, Gustaaf; Germain, Marianne (2010) -
Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Cheng, Kai; Motsnyi, Vasyl; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2007) -
Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Cheng, Kai; Motsnyi, Vasyl; Leys, Maarten; Degroote, Stefan; Sijmus, Bram; Germain, Marianne; Borghs, Gustaaf (2008) -
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2010) -
Extreme ultraviolet Al(1-x)Ga(x)N photodetectors for future solar missions
Malinowski, Pawel; John, Joachim; Aparicio Alonso, Patricia; Lorenz, Anne; Cheng, Kai; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf; Mertens, Robert; Duboz, Jean Yves; Kroth, Udo; Richter, Matthias (2008) -
Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Bender, Hugo; Favia, Paola; Borghs, Gustaaf; Germain, Marianne (2012) -
GaN growth on patterned silicon substrates. A thermo mechanical study on wafer bow reduction
Gonzalez, Mario; Cheng, Kai; Tseng, Peter; Borghs, Gustaaf (2012) -
GaN MISFETs using organic gaate dielectrics
Wang, Wenfei; Steudel, Soeren; Cheng, Kai; Borghs, Gustaaf (2007) -
GaN technology on high-resistivity Si-substrates for high-power-amplifiers
Das, Jo; Derluyn, Joff; Lorenz, Anne; Oprins, Herman; Xiao, Dongping; De Raedt, Walter; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008) -
GaN-Epi-Layer auf 200-mm-Si-Substraten fur LEDs
Cheng, Kai; Dekoster, Johan; Jun, Sung Won; Del-Agua-Borniquel, Jose-Ignacio (2011-08) -
GaN-Epi-Layer auf 200mm-Si-Substraten für LEDs
Cheng, Kai; Dekoster, Johan; Jun, Sung Won; del Agua Borniquel, Jose Ignacio (2011-08) -
GaN-on-Si for high-voltage applications
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Vandenplas, Erwin; Viaene, John; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2011) -
GaN-on-Si for high-voltage applications
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Vandenplas, Erwin; Viaene, John; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2011) -
GaN-on-Si for power conversion
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Marcon, Denis; Degroote, Stefan; Cheng, Kai; Leys, Maarten; Visalli, Domenica; Srivastava, Puneet; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2010) -
GaN-on-Si HEMT stress under high electric field condition
Marcon, Denis; Lorenz, Anne; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2008)