Browsing by author "Derluyn, Joff"
Now showing items 21-40 of 98
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Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
Kudrawiec, Robert; Paszkiewicz, B.; Motyka, M.; Misciewic, Jan; Derluyn, Joff; Lorenz, Anne; Cheng, Kai; Das, Jo; Germain, Marianne (2008-11) -
Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
Derluyn, Joff; Moerman, Ingrid; Leys, Maarten; Patriarche, G.; Sek, G.; Kudrawiec, R.; Rudno-Rudzinski, W.; Ryczko, K.; Misiewicz, J. (2003) -
Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers
Cheng, Kai; Leys, Maarten; Degroote, Stefan; Boeykens, Steven; Derluyn, Joff; Germain, Marianne; Engelen, Jan; Borghs, Gustaaf (2005) -
Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Priesol, Juraj; Satka, Alexander; Visalli, Domenica; Derluyn, Joff; Zhao, Ming; Stoffels, Steve (2017) -
Detailed analysis of parasitic loading effects on power performance of GaN-on-Silicon HEMTs
Xiao, Dongping; Schreurs, Dominique; De Raedt, Walter; Derluyn, Joff; Germain, Marianne; Nauwelaers, Bart; Borghs, Gustaaf (2009-12) -
Development of a low temperature growth regime for GaInNAs
Derluyn, Joff; Patriarche, G.; Moerman, Ingrid (2001) -
Effect of metal work functions on barrier heights of Schottky contacts and two-dimensional electron gas in strained AlGaN/GaN heterostructures
Wang, Wenfei; Zimmermann, L.; Derluyn, Joff; Germain, Marianne; Schreurs, Dominique; Borghs, Gustaaf (2004) -
Efficiency enhancement of harmonic-tuned GaN power amplifier using Doherty like load modulation
Xiao, Dongping; Schreurs, Dominique; Angelov, I.; De Raedt, Walter; Derluyn, Joff; Germain, Marianne; Nauwelaers, Bart; Borghs, Gustaaf (2008) -
Epitaxial growth of III-nitrides on silicon substrates
Degroote, Stefan; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Derluyn, Joff; Borghs, Gustaaf; Germain, Marianne (2010) -
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2010) -
Exploring possibilities of band gap measurement with off-axis EELS in TEM
Korneychuk, Svetlana; Partoens, Bart; Guzzinati, Giulio; Ramaneti, Rajesh; Derluyn, Joff; Haenen, Ken; Verbeeck, Jo (2017) -
Exploring possibilities of band gap measurement with off-axis EELS in TEM
Korneychuk, Svetlana; Partoens, Bart; Guzzinati, Giulio; Ramaneti, Rajesh; Derluyn, Joff; Haenen, Ken; Verbeeck, Jo (2018) -
Extreme ultraviolet Al(1-x)Ga(x)N photodetectors for future solar missions
Malinowski, Pawel; John, Joachim; Aparicio Alonso, Patricia; Lorenz, Anne; Cheng, Kai; Derluyn, Joff; Germain, Marianne; Borghs, Gustaaf; Mertens, Robert; Duboz, Jean Yves; Kroth, Udo; Richter, Matthias (2008) -
GaInNAS: a novel material for long-wavelength applications
Derluyn, Joff; Christiaens, Ilse; Moerman, Ingrid (2000) -
GaN for RF power amplifier : challenges and opportunities from material to System-in-a-Package
Germain, Marianne; Das, Johan; Derluyn, Joff; Vandersmissen, Raf; De Raedt, Walter; Schreurs, Dominique; Ruythooren, Wouter; Xiao, Dongping; Borghs, Gustaaf (2005) -
GaN power amplifier design based on artificial neural network modelling
Xiao, Dongping; Schreurs, Dominique; De Raedt, Walter; Derluyn, Joff; Balachander, Krishnan; Viaene, John; Germain, Marianne (2007) -
GaN technology on high-resistivity Si-substrates for high-power-amplifiers
Das, Jo; Derluyn, Joff; Lorenz, Anne; Oprins, Herman; Xiao, Dongping; De Raedt, Walter; Cheng, Kai; Leys, Maarten; Degroote, Stefan; Germain, Marianne; Borghs, Gustaaf (2008)