Browsing by author "Peralagu, Uthayasankaran"
Now showing items 21-33 of 33
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Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures
Yu, Hao; Putcha, Vamsi; Peralagu, Uthayasankaran; Zhao, Ming; Yadav, Sachin; Alian, Alireza; Parvais, Bertrand; Collaert, Nadine (2022-12-28) -
Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation
ElKashlan, Rana Y.; Khaled, Ahmad; Rodriguez, Raul; Putcha, Vamsi; Peralagu, Uthayasankaran; Alian, AliReza; Collaert, Nadine; Wambacq, Piet (2021) -
Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation
Takakura, Kenichiro; Putcha, Vamsi; Simoen, Eddy; Alian, AliReza; Peralagu, Uthayasankaran; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2020) -
Materials and defect aspects of III-V and III-N devices for high-speed analog/RF applications
Simoen, Eddy; Hsu, Brent; Yu, Hao; Wang, Hongyue; Zhao, Ming; Takakura, Kenichiro; Putcha, Vamsi; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020) -
MISHEMT intrinsic voltage gain under multiple channel output characteristics
Canales, Bruno Godoy; Perina, Welder Fernandes; Martino, Joao Antonio; Simoen, Eddy; Peralagu, Uthayasankaran; Collaert, Nadine; Der Agopian, Paula Ghedini (2023) -
Parasitic side channel formation due to ion implantation isolation of GaN HEMT
Yu, Hao; Peralagu, Uthayasankaran; Alian, Alireza; Zhao, Ming; Parvais, Bertrand; Collaert, Nadine (2022-12-21) -
Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors
Takakura, Kenichiro; Putcha, Vamsi; Simoen, Eddy; Alian, AliReza; Peralagu, Uthayasankaran; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2020) -
RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si
ElKashlan, Rana; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Peralagu, Uthayasankaran; Alian, AliReza; Collaert, Nadine; Wambacq, Piet; Parvais, Bertrand (2023) -
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K
Perina, Welder F.; Martino, Joao A.; Simoen, Eddy; Peralagu, Uthayasankaran; Collaert, Nadine; Agopian, Paula G. D. (2023) -
Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics
Yu, Hao; Alian, AliReza; Peralagu, Uthayasankaran; Zhao, Ming; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021-10-01) -
The revival of compound semiconductors and how they will change the world in a 5G/6G era
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Vondkar Kodandarama, Komal; Khaled, Ahmad; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
Thermal budget increased alloy disorder scattering of 2DEG in III-N heterostructures
Yu, Hao; Parvais, Bertrand; Zhao, Ming; Rodriguez, Raul; Peralagu, Uthayasankaran; Alian, Alireza; Collaert, Nadine (2022-05-16) -
Transistor modelling for mm-Wave technology pathfinding
Parvais, Bertrand; ElKashlan, Rana Y.; Yu, Hao; Sibaja-Hernandez, Arturo; Vermeersch, Bjorn; Putcha, Vamsi; Cardinael, Pieter; Rodriguez, Raul; Khaled, Ahmad; Alian, AliReza; Peralagu, Uthayasankaran; Zhao, Ming; Yadav, Sachin; Gramegna, Giuseppe; Van Driessche, Joris; Collaert, Nadine (2021)