Browsing by author "Liang, Hu"
Now showing items 21-40 of 55
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Exploration of gate trench module for vertical GaN devices
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Neviani, Andrea; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2020) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V-T instability effect
You, Shuzhen; Li, Xiangdong; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2021) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Gate module study for performance improvement in vertical GaN device
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Heuken, Michael (2016) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Posthuma, Niels; Heuken, Michael (2016) -
Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT
Martin, Eickelkamp; Fahle, Dirk; Mauder, Christof; Zhao, Ming; Liang, Hu; Posthuma, Niels; Van Hove, Marleen; Heuken, Michael (2017) -
Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Zhao, Ming; Saripalli, Yoga; Kandaswamy, Prem Kumar; Liang, Hu; Firrincieli, Andrea; Decoutere, Stefaan; Vancoille, Eric (2013) -
Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Zhao, Ming; Saripalli, Yoga; Kandaswamy, Prem Kumar; Liang, Hu; Firrincieli, Andrea; Decoutere, Stefaan; Vancoille, Eric (2014) -
Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy
Liang, Hu; Cheng, Kai; Zhang, Liyang; Leys, Maarten; Sijmus, Bram; L'abbe, Caroline; Dekoster, Johan; Borghs, Gustaaf (2011) -
Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE
Liang, Hu; Saripalli, Yoga; Van Hove, Marleen; Kang, Xuanwu; Vrancken, Evi; Zhao, Ming; Kandaswamy, Prem Kumar; Decoutere, Stefaan; Langer, Robert (2014) -
Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate
Liang, Hu; Saripalli, Yoga; Kandaswamy, Prem Kumar; Carlson, Eric Porter; Favia, Paola; Richard, Olivier; Bender, Hugo; Zhao, Ming; Thapa, Sarad Bahadur; Vancoille, Eric (2014) -
Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Posthuma, Niels; You, Shuzhen; Liang, Hu; Ronchi, Nicolo; Kang, Xuanwu; Wellekens, Dirk; Saripalli, Yoga; Decoutere, Stefaan (2016) -
Integration of GaN analog building blocks on p-GaN wafers for GaN ICs
Li, Xiangdong; Geens, Karen; Amirifar, Nooshin; Zhao, Ming; You, Shuzhen; Posthuma, Niels; Liang, Hu; Groeseneken, Guido; Decoutere, Stefaan (2021) -
Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics
Li, Xiangdong; Posthuma, Niels; Bakeroot, Benoit; Liang, Hu; You, Shuzhen; Wu, Zhicheng; Zhao, Ming; Groeseneken, Guido; Decoutere, Stefaan (2021) -
MOCVD growth of DH-HEMT buffers with low-temperature ALN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2015) -
MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2016) -
Next generation 200mm substrates for GaN power devices
Stoffels, Steve; Geens, Karen; Zhao, Ming; Liang, Hu; Van Hove, Marleen; Decoutere, Stefaan (2017-05)