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Electron energy band alignment at interfaces of (100)Ge with Gd2O3 and LaHfO

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorShamuilia, Sheron
dc.contributor.authordimoulas, A.
dc.contributor.authorStesmans, Andre
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-16T00:42:27Z
dc.date.available2021-10-16T00:42:27Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10002
dc.sourceIIOimport
dc.titleElectron energy band alignment at interfaces of (100)Ge with Gd2O3 and LaHfO
dc.typeOral presentation
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.conferenceIEEE Semiconductor Interfce Specialists Conference
dc.source.conferencedate1/12/2005
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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