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In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs

dc.contributor.authorAndrieu, F.
dc.contributor.authorErnst, T.
dc.contributor.authorRavit, Claire
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGibaudo, G.
dc.contributor.authorDeleonibus, S.
dc.date.accessioned2021-10-16T00:42:45Z
dc.date.available2021-10-16T00:42:45Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10018
dc.sourceIIOimport
dc.titleIn-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs
dc.typeJournal article
dc.contributor.imecauthorJurczak, Gosia
dc.source.peerreviewno
dc.source.beginpage755
dc.source.endpage757
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume26
imec.availabilityPublished - imec


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