In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs

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Authors

Andrieu, F.; Ernst, T.; Ravit, Claire; Jurczak, Gosia; Gibaudo, G.; Deleonibus, S.

Issue

10

Journal

IEEE Electron Device Letters

Volume

26

Title

In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs

Publication type

Journal article

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