Publication:
In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs
Date
| dc.contributor.author | Andrieu, F. | |
| dc.contributor.author | Ernst, T. | |
| dc.contributor.author | Ravit, Claire | |
| dc.contributor.author | Jurczak, Gosia | |
| dc.contributor.author | Gibaudo, G. | |
| dc.contributor.author | Deleonibus, S. | |
| dc.contributor.imecauthor | Jurczak, Gosia | |
| dc.date.accessioned | 2021-10-16T00:42:45Z | |
| dc.date.available | 2021-10-16T00:42:45Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10018 | |
| dc.source.beginpage | 755 | |
| dc.source.endpage | 757 | |
| dc.source.issue | 10 | |
| dc.source.journal | IEEE Electron Device Letters | |
| dc.source.volume | 26 | |
| dc.title | In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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