Show simple item record

Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements

dc.contributor.authorAresu, S.
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorKnuyt, G.
dc.contributor.authorDe Schepper, Luc
dc.date.accessioned2021-10-16T00:42:50Z
dc.date.available2021-10-16T00:42:50Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10021
dc.sourceIIOimport
dc.titleUnderstanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements
dc.typeJournal article
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.beginpage182
dc.source.endpage185
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record