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A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics

dc.contributor.authorAutran, J.L.
dc.contributor.authorMunteanu, D.
dc.contributor.authorBescond, M.
dc.contributor.authorHoussa, Michel
dc.contributor.authorSaid, A.
dc.date.accessioned2021-10-16T00:43:15Z
dc.date.available2021-10-16T00:43:15Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10038
dc.sourceIIOimport
dc.titleA simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.beginpage1897
dc.source.endpage1901
dc.source.journalJournal of Non-Crystalline Solids
dc.source.issue21_23
dc.source.volume351
imec.availabilityPublished - imec


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