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dc.contributor.authorBeckx, Stephan
dc.contributor.authorDemand, Marc
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorHenson, Kirklen
dc.contributor.authorClaes, Martine
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorShamiryan, Denis
dc.contributor.authorJaenen, Patrick
dc.contributor.authorBoullart, Werner
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBiesemans, Serge
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorVertommen, Johan
dc.contributor.authorCoenegrachts, Bart
dc.date.accessioned2021-10-16T00:44:47Z
dc.date.available2021-10-16T00:44:47Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10074
dc.sourceIIOimport
dc.titleImplementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development
dc.typeJournal article
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorJaenen, Patrick
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorCoenegrachts, Bart
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.beginpage1007
dc.source.endpage1011
dc.source.journalMicroelectronics Reliability
dc.source.issue5_6
dc.source.volume45
imec.availabilityPublished - imec
imec.internalnotesPaper from the 13th Workshop on Dielectrics in Microelectronics 2004


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