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Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

dc.contributor.authorBlasco, X.
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorPetry, Jasmine
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T00:46:48Z
dc.date.available2021-10-16T00:46:48Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10107
dc.sourceIIOimport
dc.titleNanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage2817
dc.source.endpage2819
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue12
dc.source.volume52
imec.availabilityPublished - imec


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